TEKNIK ELEKTRONIKA

The ability of phase-change materials to readily and swiftly switch between different phases has made them valuable for the fabrication of low-power, non-volatile flash memory and data storage devices. Now researchers with the Lawrence Berkeley National Laboratory (Berkeley Lab) and the University of California (UC) Berkeley have discovered an entire new class of phase-change materials that could be utilised in phase-change random access memory technologies and possibly optical data storage as well.  The new phase-change materials are nanocrystalline alloys of a metal and semiconductor called binary eutectic-alloy nanostructures, or BEANs for short.

 

BEAN materials offer the potential for developing phase-change memory (PCM) technologies with better performance than those based on conventional phase-change materials. The researchers suggest that BEANs could be formed into high density arrays of nanowires or quantum dots whose states can be switched from amorphous to crystalline in just nanoseconds.

Conventional PCM materials are made from chalcogenide glass, which can be switched between the crystalline and amorphous states

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